Corsair CMZ16GX3M2A2400C10 8GB vs SK Hynix HMA82GS6DJR8N-WM 16GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

SK Hynix HMA82GS6DJR8N-WM 16GB

SK Hynix HMA82GS6DJR8N-WM 16GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 43

左右 14% 更低的延时

SK Hynix HMA82GS6DJR8N-WM 16GB

需要考虑的原因
SK Hynix HMA82GS6DJR8N-WM 16GB

报告一个错误

更快的读取速度，GB/s

15 11.4

测试中的平均数值
更快的写入速度，GB/s

13.0 7.4

测试中的平均数值
更高的内存带宽，mbps

23400 10600

左右 2.21 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

SK Hynix HMA82GS6DJR8N-WM 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 43
读取速度，GB/s

11.4 15.0
写入速度，GB/s

7.4 13.0
内存带宽，mbps

10600 23400

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

7-7-7-20 / 1333 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

1683 2794

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G4S240FSD.16FAR 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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TwinMOS 8DPT5MK8-TATP 2GB

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InnoDisk Corporation M4SI-8GS1NC0K-C 8GB

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Samsung M471B5173DB0-YK0 4GB

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Kingston 9905403-011.A03LF 2GB

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Samsung M378B5173BH0-CH9 4GB

Crucial Technology CT8G4SFS8213.C8FDR1 8GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

G Skill Intl F4-3000C15-8GVRB 8GB

G Skill Intl F4-3000C15-8GVRB 8GB