Corsair VS1GB800D2 1GB vs G Skill Intl F4-3600C16-8GTZ 8GB

总分

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

总分

G Skill Intl F4-3600C16-8GTZ 8GB

G Skill Intl F4-3600C16-8GTZ 8GB

差异规格评论

差异

Corsair VS1GB800D2 1GB

需要考虑的原因
Corsair VS1GB800D2 1GB

报告一个错误

更快的读取速度，GB/s

4 20.4

测试中的平均数值

G Skill Intl F4-3600C16-8GTZ 8GB

需要考虑的原因
G Skill Intl F4-3600C16-8GTZ 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 47

左右 -104% 更低的延时
更快的写入速度，GB/s

16.5 1,361.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Corsair VS1GB800D2 1GB

G Skill Intl F4-3600C16-8GTZ 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

47 23
读取速度，GB/s

4,680.7 20.4
写入速度，GB/s

1,361.1 16.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

460 3810

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4DFS832A.M8FR 8GB

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Samsung M378B5773DH0-CH9 2GB

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Samsung M391A1G43DB0-CPB 8GB

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

Crucial Technology BLS4G4D240FSB.8FAR 4GB

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Kingston 99P5474-014.A00LF 4GB

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Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

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Kingmax Semiconductor GLLF62F-DA---------- 4GB