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Crucial Technology 8G4US2400.M8B1 8GB
Samsung M471A1G44AB0-CWE 8GB

Crucial Technology 8G4US2400.M8B1 8GB vs Samsung M471A1G44AB0-CWE 8GB

总分
star star star star star
Crucial Technology 8G4US2400.M8B1 8GB

Crucial Technology 8G4US2400.M8B1 8GB

总分
star star star star star
Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

差异 规格 评论

差异

Crucial Technology 8G4US2400.M8B1 8GB 需要考虑的原因
Crucial Technology 8G4US2400.M8B1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 50
    左右 54% 更低的延时
  • 更快的读取速度，GB/s
    17.1 left arrow 15.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.2 left arrow 10.9
    测试中的平均数值
Samsung M471A1G44AB0-CWE 8GB 需要考虑的原因
Samsung M471A1G44AB0-CWE 8GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Crucial Technology 8G4US2400.M8B1 8GB
Samsung M471A1G44AB0-CWE 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    23 left arrow 50
  • 读取速度，GB/s
    17.1 left arrow 15.3
  • 写入速度，GB/s
    12.2 left arrow 10.9
  • 内存带宽，mbps
    19200 left arrow 25600
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2898 left arrow 2512

Crucial Technology 8G4US2400.M8B1 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
SpecTek Incorporated ?????????????????? 2GB

Samsung M471A1G44AB0-CWE 8GB RAM的比较

Samsung M386B4G70DM0-CMA4 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMR16GX4M2E4266C19 8GB
Corsair CMR16GX4M2E4266C19 8GB
内存RAM
Crucial Technology 8G4US2400.M8B1 8GB
Crucial Technology 8G4US2400.M8B1 8GB
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMR32GX4M2C3200C16 16GB
Corsair CMR32GX4M2C3200C16 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
A-DATA Technology DDR4 3200 8GB
A-DATA Technology DDR4 3200 8GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
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InnoDisk Corporation M4C0-AGS1TCSJ 16GB
内存RAM
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
Chun Well Technology Holding Limited MD4U1632160DCW 16GB
Chun Well Technology Holding Limited MD4U1632160DCW 16G
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
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Kingston 9965589-013.A00G 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Kingston 9905678-139.A00G 8GB
Kingston 9905678-139.A00G 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology CT4G4SFS8213.C8FADP 4GB
Crucial Technology CT4G4SFS8213.C8FADP 4GB
内存RAM
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Crucial Technology CT51264BD160B.C16F 4GB
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Crucial Technology CT4G4SFS824A.M8FE 4GB
内存RAM
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F4-3000C14-16GVK 16GB
G Skill Intl F4-3000C14-16GVK 16GB
内存RAM