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Crucial Technology BL16G26C16U4R.16FE 16GB
PUSKILL PJ16TFK1GM8 16GB
比较
Crucial Technology BL16G26C16U4R.16FE 16GB vs PUSKILL PJ16TFK1GM8 16GB
总分
Crucial Technology BL16G26C16U4R.16FE 16GB
总分
PUSKILL PJ16TFK1GM8 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BL16G26C16U4R.16FE 16GB
报告一个错误
低于PassMark测试中的延时,ns
29
41
左右 29% 更低的延时
更快的读取速度,GB/s
17.1
12.7
测试中的平均数值
更快的写入速度,GB/s
13.0
10.7
测试中的平均数值
更高的内存带宽,mbps
21300
19200
左右 1.11% 更高的带宽
需要考虑的原因
PUSKILL PJ16TFK1GM8 16GB
报告一个错误
规格
完整的技术规格清单
Crucial Technology BL16G26C16U4R.16FE 16GB
PUSKILL PJ16TFK1GM8 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
41
读取速度,GB/s
17.1
12.7
写入速度,GB/s
13.0
10.7
内存带宽,mbps
21300
19200
Other
描述
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
3384
2621
Crucial Technology BL16G26C16U4R.16FE 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
PUSKILL PJ16TFK1GM8 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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takeMS International AG TMS2GB264D083805EV 2GB
Maxsun MSD48G30M3 8GB
Samsung M3 78T5663EH3-CF7 2GB
SK Hynix HMA81GS6CJR8N-XN 8GB
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Corsair CM4X16GF3200C22S2 16GB
A-DATA Technology AD5U48008G-B 8GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Samsung M378A1G43EB1-CPB 8GB
Kingston KVR800D2N6/2G 2GB
Crucial Technology CT8G4SFS8213.M8FA 8GB
报告一个错误
×
Bug description
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