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Crucial Technology BLE4G3D1608DE1TX0. 4GB
Corsair CMD64GX4M4A2666C15 16GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB vs Corsair CMD64GX4M4A2666C15 16GB

总分
star star star star star
Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

总分
star star star star star
Corsair CMD64GX4M4A2666C15 16GB

Corsair CMD64GX4M4A2666C15 16GB

差异 规格 评论

差异

Crucial Technology BLE4G3D1608DE1TX0. 4GB 需要考虑的原因
Crucial Technology BLE4G3D1608DE1TX0. 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 41
    左右 17% 更低的延时
  • 更快的读取速度，GB/s
    16.2 left arrow 14
    测试中的平均数值
Corsair CMD64GX4M4A2666C15 16GB 需要考虑的原因
Corsair CMD64GX4M4A2666C15 16GB
报告一个错误
  • 更快的写入速度，GB/s
    13.9 left arrow 9.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Corsair CMD64GX4M4A2666C15 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    34 left arrow 41
  • 读取速度，GB/s
    16.2 left arrow 14.0
  • 写入速度，GB/s
    9.7 left arrow 13.9
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2636 left arrow 3100

Crucial Technology BLE4G3D1608DE1TX0. 4GB RAM的比较

Kingston HX316C10F/4 4GB
Corsair CM4X4GF2666Z16K4 4GB

Corsair CMD64GX4M4A2666C15 16GB RAM的比较

Samsung M3 78T3354BZ0-CCC 256MB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Corsair CMK16GX4M2E3200C16 8GB
Corsair CMK16GX4M2E3200C16 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Golden Empire CL18-22-22 D4-3600 16GB
Golden Empire CL18-22-22 D4-3600 16GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-4000C18-32GTZN 32GB
G Skill Intl F4-4000C18-32GTZN 32GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Gold Key Technology Co Ltd NMUD480E85-3200E 8GB
Gold Key Technology Co Ltd NMUD480E85-3200E 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMK64GX4M4A2133C13 16GB
Corsair CMK64GX4M4A2133C13 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. IR2133D464L15S/8G 8GB
Wilk Elektronik S.A. IR2133D464L15S/8G 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology BLS16G4D32AESC.M16FE 16GB
Crucial Technology BLS16G4D32AESC.M16FE 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
G Skill Intl F4-3000C16-8GSXFB 8GB
G Skill Intl F4-3000C16-8GSXFB 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Kingston KHX3466C19D4/8G 8GB
Kingston KHX3466C19D4/8G 8GB
内存RAM
Corsair VSA2GSDS667C4 2GB
Corsair VSA2GSDS667C4 2GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Kingston 9905624-051.A00G 8GB
Kingston 9905624-051.A00G 8GB
内存RAM