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Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3600C18-8GTZRX 8GB
比较
Crucial Technology CT51264BD1339.M16F 4GB vs G Skill Intl F4-3600C18-8GTZRX 8GB
总分
Crucial Technology CT51264BD1339.M16F 4GB
总分
G Skill Intl F4-3600C18-8GTZRX 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
25
29
左右 14% 更低的延时
需要考虑的原因
G Skill Intl F4-3600C18-8GTZRX 8GB
报告一个错误
更快的读取速度,GB/s
18.3
12.1
测试中的平均数值
更快的写入速度,GB/s
15.3
8.6
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3600C18-8GTZRX 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
29
读取速度,GB/s
12.1
18.3
写入速度,GB/s
8.6
15.3
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2045
3555
Crucial Technology CT51264BD1339.M16F 4GB RAM的比较
Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB
G Skill Intl F4-3600C18-8GTZRX 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Micron Technology 72ASS4G72LZ-2G1A1 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Apacer Technology AQD-D4U8GN24-SE 8GB
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Samsung M3 78T2953EZ3-CF7 1GB
SK Hynix HMA81GU6CJR8N-XN 8GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BL8G26C16U4R.8FD 8GB
报告一个错误
×
Bug description
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