Crucial Technology BLE4G3D1608DE1TX0. 4GB vs Corsair CMD64GX4M8X4000C19 8GB

总分

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

总分

Corsair CMD64GX4M8X4000C19 8GB

Corsair CMD64GX4M8X4000C19 8GB

差异规格评论

差异

Crucial Technology BLE4G3D1608DE1TX0. 4GB

需要考虑的原因
Crucial Technology BLE4G3D1608DE1TX0. 4GB

报告一个错误

更快的读取速度，GB/s

16.2 12.2

测试中的平均数值

Corsair CMD64GX4M8X4000C19 8GB

需要考虑的原因
Corsair CMD64GX4M8X4000C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 34

左右 -26% 更低的延时
更快的写入速度，GB/s

15.9 9.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Corsair CMD64GX4M8X4000C19 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 27
读取速度，GB/s

16.2 12.2
写入速度，GB/s

9.7 15.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2636 3199

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Kingmax Semiconductor GSAG42F-18---------- 8GB

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Samsung M3 78T5663RZ3-CE6 2GB

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Team Group Inc. Dark-1866 4GB

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A-DATA Technology AD73I1B1672EG 2GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Corsair CMV4GX4M1A2133C15 4GB

Corsair CMV4GX4M1A2133C15 4GB