RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更快的读取速度,GB/s
15.6
11.8
测试中的平均数值
更快的写入速度,GB/s
11.8
5.3
测试中的平均数值
更高的内存带宽,mbps
25600
19200
左右 1.33% 更高的带宽
需要考虑的原因
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
报告一个错误
低于PassMark测试中的延时,ns
26
51
左右 -96% 更低的延时
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
26
读取速度,GB/s
15.6
11.8
写入速度,GB/s
11.8
5.3
内存带宽,mbps
25600
19200
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2687
1884
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M378A5244CB0-CTD 4GB
G Skill Intl F4-2133C15-8GSQ 8GB
SK Hynix HMA81GS6DJR8N-XN 8GB
Samsung M471A1K43DB1-CWE 8GB
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 16ATF2G64HZ-2G1A1 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
UMAX Technology 16GB
Samsung M393B2G70BH0-CH9 16GB
Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB
Samsung M471B1G73EB0-YK0 8GB
Corsair CMR32GX4M2C3000C16 16GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology BL8G36C16U4R.M8FE1 8GB
Kingston 9965525-155.A00LF 8GB
Asgard VMA45UH-MEC1U2AW2 16GB
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology BLS4G4D26BFSB.8FBD2 4GB
Kingston HX318C10FK/4 4GB
Wilk Elektronik S.A. GY2133D464L15S/4G 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLE16G4D30AEEA.K16FB 16GB
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology BLS4G4D240FSA.8FBD 4GB
Samsung M393B2G70BH0-YK0 16GB
Samsung M378A2G43MX3-CTD 16GB
报告一个错误
×
Bug description
Source link