Samsung M471B1G73EB0-YK0 8GB vs Corsair CMR32GX4M2C3000C16 16GB

总分

Samsung M471B1G73EB0-YK0 8GB

Samsung M471B1G73EB0-YK0 8GB

总分

Corsair CMR32GX4M2C3000C16 16GB

Corsair CMR32GX4M2C3000C16 16GB

差异规格评论

差异

Samsung M471B1G73EB0-YK0 8GB

需要考虑的原因
Samsung M471B1G73EB0-YK0 8GB

报告一个错误

Corsair CMR32GX4M2C3000C16 16GB

需要考虑的原因
Corsair CMR32GX4M2C3000C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

20 46

左右 -130% 更低的延时
更快的读取速度，GB/s

19.3 12.2

测试中的平均数值
更快的写入速度，GB/s

15.3 7.9

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73EB0-YK0 8GB

Corsair CMR32GX4M2C3000C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

46 20
读取速度，GB/s

12.2 19.3
写入速度，GB/s

7.9 15.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2072 3492

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT25664AA800.M16FM 2GB

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Corsair CMK16GX4M1C3000C16 16GB

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G Skill Intl F4-4400C19-32GVK 32GB

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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB

GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Corsair CMK32GX4M4K4000C19 8GB

Corsair CMK32GX4M4K4000C19 8GB

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Samsung M471B5273DH0-CK0 4GB

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Corsair CMG16GX4M2E3200C16 8GB

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

Corsair CMK16GX4M2K4500C19 8GB

Corsair CMK16GX4M2K4500C19 8GB