Samsung M3 78T3354BZ0-CCC 256MB vs GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB

GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 17.3

测试中的平均数值

GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB

需要考虑的原因
GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 46

左右 -59% 更低的延时
更快的写入速度，GB/s

10.8 1,519.2

测试中的平均数值
更高的内存带宽，mbps

21300 3200

左右 6.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 29
读取速度，GB/s

2,909.8 17.3
写入速度，GB/s

1,519.2 10.8
内存带宽，mbps

3200 21300

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

3-3-3-12 / 400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

241 2968

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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SK Hynix HMA82GU6CJR8N-XN 16GB

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Samsung M378B5273CH0-CH9 4GB

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Elpida EBJ21UE8BDF0-DJ-F 2GB

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AMD R744G2400U1S 4GB

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Kingston 9905403-444.A00LF 4GB

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Smart Modular SF4641G8CK8I8GKSBG 8GB

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SK Hynix HMA851U6CJR6N-VK 4GB

SK Hynix HMA851U6CJR6N-VK 4GB

Samsung M393B1K70CH0-CH9 8GB

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Kingston HP26D4U9S8MD-8 8GB

Kingston HP26D4U9S8MD-8 8GB

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

G Skill Intl F4-2133C15-8GSQ 8GB

G Skill Intl F4-2133C15-8GSQ 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

NSITEXE Inc Visenta 16GB

NSITEXE Inc Visenta 16GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

G Skill Intl F4-3200C16-16GTRG 16GB

G Skill Intl F4-3200C16-16GTRG 16GB