Crucial Technology BLE4G3D1608DE1TX0. 4GB vs Crucial Technology BLS16G4S240FSD.16FD 16GB

总分

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

总分

Crucial Technology BLS16G4S240FSD.16FD 16GB

Crucial Technology BLS16G4S240FSD.16FD 16GB

差异规格评论

差异

Crucial Technology BLE4G3D1608DE1TX0. 4GB

需要考虑的原因
Crucial Technology BLE4G3D1608DE1TX0. 4GB

报告一个错误

更快的读取速度，GB/s

16.2 14.6

测试中的平均数值

Crucial Technology BLS16G4S240FSD.16FD 16GB

需要考虑的原因
Crucial Technology BLS16G4S240FSD.16FD 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 34

左右 -6% 更低的延时
更快的写入速度，GB/s

10.6 9.7

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLS16G4S240FSD.16FD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 32
读取速度，GB/s

16.2 14.6
写入速度，GB/s

9.7 10.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2636 2457

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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SK Hynix HMA851S6DJR6N-VK 4GB

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Crucial Technology BLE4G3D1608DE1TX0. 4GB

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Crucial Technology BLS16G4S240FSD.16FD 16GB

Crucial Technology BLS16G4S240FSD.16FD 16GB

Samsung M395T2863QZ4-CF76 1GB

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G Skill Intl F4-3333C16-16GTZB 16GB

G Skill Intl F4-3333C16-16GTZB 16GB

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Asgard VMA42UG-MEC1U2AW1 8GB

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Kingston HP26D4S9S8MD-8 8GB

Kingston HP26D4S9S8MD-8 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology CT8G4DFD8213.C16FADP 8GB

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Crucial Technology CT51264BA160B.C16F 4GB

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Kingston 9905630-051.A00G 16GB

Kingston 9905630-051.A00G 16GB