Crucial Technology BLE4G3D1608DE1TX0. 4GB vs Crucial Technology BLS8G4D30AESBK.M8FE 8GB

总分

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

总分

Crucial Technology BLS8G4D30AESBK.M8FE 8GB

Crucial Technology BLS8G4D30AESBK.M8FE 8GB

差异规格评论

差异

Crucial Technology BLE4G3D1608DE1TX0. 4GB

需要考虑的原因
Crucial Technology BLE4G3D1608DE1TX0. 4GB

报告一个错误

Crucial Technology BLS8G4D30AESBK.M8FE 8GB

需要考虑的原因
Crucial Technology BLS8G4D30AESBK.M8FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 34

左右 -21% 更低的延时
更快的读取速度，GB/s

18.5 16.2

测试中的平均数值
更快的写入速度，GB/s

14.4 9.7

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLS8G4D30AESBK.M8FE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 28
读取速度，GB/s

16.2 18.5
写入速度，GB/s

9.7 14.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2636 3402

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX2133C11D3/4GX 4GB

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Kingmax Semiconductor GLLF62F-C6---------- 4GB

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Kingston 9905403-061.A00LF 2GB

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Corsair CMSX32GX4M1A2666C18 32GB

Samsung M378A1K43EB2-CWE 8GB

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G Skill Intl F4-3200C16-32GVK 32GB

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Samsung M471A5244CB0-CTD 4GB

Crucial Technology CT4G4SFS8266.C8FE 4GB

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Kingston KHX2666C16D4/16GX 16GB

Kingston KHX2666C16D4/16GX 16GB

Patriot Memory (PDP Systems) 4266 C18 Series 8GB

Patriot Memory (PDP Systems) 4266 C18 Series 8GB