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Crucial Technology BLS4G3D1609DS1S00. 4GB
Corsair CMZ8GX3M2A1600C9 4GB

Crucial Technology BLS4G3D1609DS1S00. 4GB vs Corsair CMZ8GX3M2A1600C9 4GB

总分
star star star star star
Crucial Technology BLS4G3D1609DS1S00. 4GB

Crucial Technology BLS4G3D1609DS1S00. 4GB

总分
star star star star star
Corsair CMZ8GX3M2A1600C9 4GB

Corsair CMZ8GX3M2A1600C9 4GB

差异 规格 评论

差异

Crucial Technology BLS4G3D1609DS1S00. 4GB 需要考虑的原因
Crucial Technology BLS4G3D1609DS1S00. 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 39
    左右 5% 更低的延时
  • 更快的读取速度，GB/s
    15.6 left arrow 14.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.8 left arrow 8.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21% 更高的带宽
Corsair CMZ8GX3M2A1600C9 4GB 需要考虑的原因
Corsair CMZ8GX3M2A1600C9 4GB
报告一个错误

规格

完整的技术规格清单
Crucial Technology BLS4G3D1609DS1S00. 4GB
Corsair CMZ8GX3M2A1600C9 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    37 left arrow 39
  • 读取速度，GB/s
    15.6 left arrow 14.4
  • 写入速度，GB/s
    9.8 left arrow 8.8
  • 内存带宽，mbps
    12800 left arrow 10600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2487 left arrow 2340

Crucial Technology BLS4G3D1609DS1S00. 4GB RAM的比较

Kingston 99U5702-095.A00G 8GB

Corsair CMZ8GX3M2A1600C9 4GB RAM的比较

Kingston KHX16 4GB
Samsung M471B5273DH0-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology BLS4G3D1609DS1S00. 4GB
Crucial Technology BLS4G3D1609DS1S00. 4GB
Corsair CMZ8GX3M2A1600C9 4GB
Corsair CMZ8GX3M2A1600C9 4GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 9965640-001.C00G 16GB
Kingston 9965640-001.C00G 16GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
V-GEN D4H8GL36A8TXV 8GB
V-GEN D4H8GL36A8TXV 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4SFS824A.C8FE 8GB
Crucial Technology CT8G4SFS824A.C8FE 8GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Kingston LV32D4U2S8HD-8X 8GB
Kingston LV32D4U2S8HD-8X 8GB
内存RAM
Kingston KF560C40-16 16GB
Kingston KF560C40-16 16GB
G Skill Intl F4-4266C19-8GTZSW 8GB
G Skill Intl F4-4266C19-8GTZSW 8GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
G Skill Intl F4-4000C18-32GTRS 32GB
G Skill Intl F4-4000C18-32GTRS 32GB
内存RAM
Kingmax Semiconductor GLAG42F-18---------- 8GB
Kingmax Semiconductor GLAG42F-18---------- 8GB
Shenzen Recadata Storage Technology 8GB
Shenzen Recadata Storage Technology 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology BL16G32C16U4RL.M8FB1 16GB
Crucial Technology BL16G32C16U4RL.M8FB1 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Samsung M378A1K43CB2-CRC 8GB
Samsung M378A1K43CB2-CRC 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
G Skill Intl F4-4266C19-4GTZ 4GB
G Skill Intl F4-4266C19-4GTZ 4GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-2400C17-4GIS 4GB
G Skill Intl F4-2400C17-4GIS 4GB
内存RAM