Kingston 99U5595-005.A00LF 2GB vs SK Hynix GKE800UD102408-2400 8GB

总分

Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

总分

SK Hynix GKE800UD102408-2400 8GB

SK Hynix GKE800UD102408-2400 8GB

差异规格评论

差异

Kingston 99U5595-005.A00LF 2GB

需要考虑的原因
Kingston 99U5595-005.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 36

左右 28% 更低的延时

SK Hynix GKE800UD102408-2400 8GB

需要考虑的原因
SK Hynix GKE800UD102408-2400 8GB

报告一个错误

更快的读取速度，GB/s

14.4 13.2

测试中的平均数值
更快的写入速度，GB/s

10.4 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 99U5595-005.A00LF 2GB

SK Hynix GKE800UD102408-2400 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 36
读取速度，GB/s

13.2 14.4
写入速度，GB/s

7.3 10.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1489 2489

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK128GX4M8Z2933C16 16GB

Corsair CMK128GX4M8Z2933C16 16GB

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Essencore Limited KD4AGU88C-26N1900 16GB

Essencore Limited KD4AGU88C-26N1900 16GB

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Kingston 9965525-144.A00LF 8GB

Samsung M378A1K43BB2-CRC 8GB

Samsung M378A1K43BB2-CRC 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Crucial Technology CT8G4SFS824A.C8FDD1 8GB

Crucial Technology CT8G4SFS824A.C8FDD1 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

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EXCELERAM D48G8G8H8SS9CJRB22 8GB