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Crucial Technology BLS4G3D1609DS1S00 4GB
Crucial Technology CT51264BA160BJ.C8 4GB

Crucial Technology BLS4G3D1609DS1S00 4GB vs Crucial Technology CT51264BA160BJ.C8 4GB

总分
star star star star star
Crucial Technology BLS4G3D1609DS1S00 4GB

Crucial Technology BLS4G3D1609DS1S00 4GB

总分
star star star star star
Crucial Technology CT51264BA160BJ.C8 4GB

Crucial Technology CT51264BA160BJ.C8 4GB

差异 规格 评论

差异

Crucial Technology BLS4G3D1609DS1S00 4GB 需要考虑的原因
Crucial Technology BLS4G3D1609DS1S00 4GB
报告一个错误
Crucial Technology CT51264BA160BJ.C8 4GB 需要考虑的原因
Crucial Technology CT51264BA160BJ.C8 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    40 left arrow 62
    左右 -55% 更低的延时
  • 更快的读取速度，GB/s
    13.4 left arrow 7.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.7 left arrow 4.2
    测试中的平均数值

规格

完整的技术规格清单
Crucial Technology BLS4G3D1609DS1S00 4GB
Crucial Technology CT51264BA160BJ.C8 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    62 left arrow 40
  • 读取速度，GB/s
    7.6 left arrow 13.4
  • 写入速度，GB/s
    4.2 left arrow 7.7
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1098 left arrow 2185

Crucial Technology BLS4G3D1609DS1S00 4GB RAM的比较

A-DATA Technology AM2U16BC4P2-B05B 4GB
Micron Technology 16JTF51264AZ-1G6K1 4GB

Crucial Technology CT51264BA160BJ.C8 4GB RAM的比较

Micron Technology 8JTF51264AZ-1G6E1 4GB
Wilk Elektronik S.A. GY1600D364L9/4G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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