RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK32GX4M2C3200C18 16GB
比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Corsair CMK32GX4M2C3200C18 16GB
总分
Crucial Technology BLS4G4D240FSE.8FBD 4GB
总分
Corsair CMK32GX4M2C3200C18 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
低于PassMark测试中的延时,ns
29
30
左右 3% 更低的延时
更快的读取速度,GB/s
16.9
16.8
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
Corsair CMK32GX4M2C3200C18 16GB
报告一个错误
更快的写入速度,GB/s
13.1
12.0
测试中的平均数值
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK32GX4M2C3200C18 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
30
读取速度,GB/s
16.9
16.8
写入速度,GB/s
12.0
13.1
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2601
3337
Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Corsair CMK32GX4M2C3200C18 16GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905403-447.A00LF 4GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
Samsung M393B2G70BH0-YK0 16GB
Micron Technology 4ATF1G64AZ-3G2B1 8GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology BLT8G4D30BET4K.C8FD 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Essencore Limited IM4AGS88N26-GIIHA0 16GB
Kingston ACR16D3LU1KNG/4G 4GB
Kingston 9905743-044.A00G 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BLS4G4D240FSC.8FARG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMK32GX4M4K3600C16 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Corsair CMR64GX4M8C3000C15 8GB
Samsung M393B5170GB0-CK0 4GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Samsung M393B1G70BH0-CK0 8GB
Kingston KVR24N17S8/4 4GB
Samsung 1600 CL10 Series 8GB
Essencore Limited IM4AGU88N26-GIIHMB 16GB
Samsung M471B5773DH0-CK0 2GB
Micron Technology 16ATF2G64AZ-2G6J1 16GB
报告一个错误
×
Bug description
Source link