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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT16G4DFD824A.M16FE 16GB
比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Crucial Technology CT16G4DFD824A.M16FE 16GB
总分
Crucial Technology BLS4G4D240FSE.8FBD 4GB
总分
Crucial Technology CT16G4DFD824A.M16FE 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
更快的读取速度,GB/s
16.9
15.9
测试中的平均数值
更快的写入速度,GB/s
12.0
11.1
测试中的平均数值
需要考虑的原因
Crucial Technology CT16G4DFD824A.M16FE 16GB
报告一个错误
低于PassMark测试中的延时,ns
26
29
左右 -12% 更低的延时
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT16G4DFD824A.M16FE 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
26
读取速度,GB/s
16.9
15.9
写入速度,GB/s
12.0
11.1
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2601
2855
Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Crucial Technology CT16G4DFD824A.M16FE 16GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M386B4G70DM0-CMA4 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Corsair CMW16GX4M2Z2933C16 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905622-051.A00G 8GB
报告一个错误
×
Bug description
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