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Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2400C17-16GIS 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB vs G Skill Intl F4-2400C17-16GIS 16GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分
star star star star star
G Skill Intl F4-2400C17-16GIS 16GB

G Skill Intl F4-2400C17-16GIS 16GB

差异 规格 评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 31
    左右 6% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 16.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 9.8
    测试中的平均数值
G Skill Intl F4-2400C17-16GIS 16GB 需要考虑的原因
G Skill Intl F4-2400C17-16GIS 16GB
报告一个错误

规格

完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2400C17-16GIS 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 31
  • 读取速度，GB/s
    16.9 left arrow 16.7
  • 写入速度，GB/s
    12.0 left arrow 9.8
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2601 left arrow 2888

Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较

SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB

G Skill Intl F4-2400C17-16GIS 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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A-DATA Technology ADOVE1A0834E 1GB
Kingston 99U5702-020.A00G 8GB
Kingston 99U5702-020.A00G 8GB
内存RAM
Samsung M471A2K43BB1-CPB 16GB
Samsung M471A2K43BB1-CPB 16GB
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Corsair CMV16GX4M1A2133C15 16GB
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Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
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内存RAM
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PUSKILL DDR3 1600 8G 8GB
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内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
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内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
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Crucial Technology BLS8G4D26BFSB.16FE 8GB
内存RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
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Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
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内存RAM
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Samsung M378B1G73QH0-CK0 8GB
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Apacer Technology GD2.0927WH.001 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB
Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingston MSI24D4D4S8MB-8 8GB
Kingston MSI24D4D4S8MB-8 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
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G Skill Intl F4-2400C15-4GRK 4GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-2400C17-8GIS 8GB
G Skill Intl F4-2400C17-8GIS 8GB
内存RAM
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
Corsair CMK16GX4M2K4266C19 8GB
Corsair CMK16GX4M2K4266C19 8GB
内存RAM