PUSKILL DDR3 1600 8G 8GB vs Crucial Technology BL16G36C16U4R.M8FB1 16GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

Crucial Technology BL16G36C16U4R.M8FB1 16GB

Crucial Technology BL16G36C16U4R.M8FB1 16GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

Crucial Technology BL16G36C16U4R.M8FB1 16GB

需要考虑的原因
Crucial Technology BL16G36C16U4R.M8FB1 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 38

左右 -31% 更低的延时
更快的读取速度，GB/s

18 16.7

测试中的平均数值
更快的写入速度，GB/s

14.5 10.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

Crucial Technology BL16G36C16U4R.M8FB1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 29
读取速度，GB/s

16.7 18.0
写入速度，GB/s

10.0 14.5
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2753 3672

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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V-GEN D4S4GL32A16TS 4GB

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G Skill Intl F4-3000C16-16GTZN 16GB

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Kingston 9965516-430.A00G 16GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

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Corsair CMK32GX4M4A2800C16 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Samsung M393B2G70BH0-CH9 16GB

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V-GEN D4H4GL30A8TS5 4GB

V-GEN D4H4GL30A8TS5 4GB

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

Patriot Memory (PDP Systems) PSD416G21332 16GB

Patriot Memory (PDP Systems) PSD416G21332 16GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Corsair CMW16GX4M2C3466C16 8GB

Corsair CMW16GX4M2C3466C16 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Kingston K6VDX7-MIE 8GB

Kingston K6VDX7-MIE 8GB

Kingston 99U5474-013.A00LF 2GB

Kingston 99U5474-013.A00LF 2GB

Crucial Technology CT16G4DFD832A.C16FJ 16GB

Crucial Technology CT16G4DFD832A.C16FJ 16GB