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Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3466C16-16GTZSW 16GB
比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB vs G Skill Intl F4-3466C16-16GTZSW 16GB
总分
Crucial Technology BLS4G4D240FSE.8FBD 4GB
总分
G Skill Intl F4-3466C16-16GTZSW 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
G Skill Intl F4-3466C16-16GTZSW 16GB
报告一个错误
低于PassMark测试中的延时,ns
27
29
左右 -7% 更低的延时
更快的读取速度,GB/s
17.7
16.9
测试中的平均数值
更快的写入速度,GB/s
14.6
12.0
测试中的平均数值
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3466C16-16GTZSW 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
27
读取速度,GB/s
16.9
17.7
写入速度,GB/s
12.0
14.6
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2601
3587
Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
G Skill Intl F4-3466C16-16GTZSW 16GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Micron Technology 4KTF25664HZ-1G6E1 2GB
A-DATA Technology 11137401 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB
Samsung M471B5673FH0-CF8 2GB
AMD R748G2133U2S-UO 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston KHX2400C12D4/16GX 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3466C16-16GTZSW 16GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-3200C14-32GTZR 32GB
Corsair CMD16GX3M2A1866C9 8GB
Lenovo LMKU8G68AHFHD-32A 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Samsung M471A1K43CB1-CRCR 8GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-3600C17-4GVK 4GB
Peak Electronics 256X64M-67E 2GB
SK Hynix HMA451R7MFR8N-TF 4GB
Kingston 9905403-437.A01LF 4GB
Corsair CMD8GX4M2B3600C18 4GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-2666C18-8GTZR 8GB
报告一个错误
×
Bug description
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