Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Micron Technology 18ADF2G72AZ-2G6E1 16GB

总分

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

总分

Micron Technology 18ADF2G72AZ-2G6E1 16GB

Micron Technology 18ADF2G72AZ-2G6E1 16GB

差异规格评论

差异

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

报告一个错误

更快的读取速度，GB/s

2 18

测试中的平均数值

Micron Technology 18ADF2G72AZ-2G6E1 16GB

需要考虑的原因
Micron Technology 18ADF2G72AZ-2G6E1 16GB

报告一个错误

低于PassMark测试中的延时，ns

64 96

左右 -50% 更低的延时
更快的写入速度，GB/s

8.5 1,336.0

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Micron Technology 18ADF2G72AZ-2G6E1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

96 64
读取速度，GB/s

2,725.2 18.0
写入速度，GB/s

1,336.0 8.5
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

438 2197

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT16G4SFD832A.M16FRS 16GB

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Kingston KHX1600C9D3/8G 8GB

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Samsung M471A1K43EB1-CWE 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Corsair CMW16GX4M2Z3200C16 8GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Micron Technology 18ADF2G72AZ-2G6E1 16GB

Micron Technology 18ADF2G72AZ-2G6E1 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Hewlett-Packard 7EH55AA# 8GB

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Kingston 9905471-002.A00LF 2GB

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G Skill Intl F4-3600C14-16GTZN 16GB

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Kingston 9905403-038.A00LF 4GB

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Patriot Memory (PDP Systems) PSD44G213382 4GB

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Samsung M393B1K70CH0-CH9 8GB

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Crucial Technology BLS4G4D240FSC.8FBR2 4GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

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Kingston 9905678-044.A00G 8GB

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Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

G Skill Intl F4-3600C14-8GTZNB 8GB

G Skill Intl F4-3600C14-8GTZNB 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Team Group Inc. TEAMGROUP-SD4-2400 16GB

Team Group Inc. TEAMGROUP-SD4-2400 16GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

SK Hynix HMA82GS6DJR8N-WM 16GB

SK Hynix HMA82GS6DJR8N-WM 16GB