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Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3600C18-8GTRG 8GB
比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB vs G Skill Intl F4-3600C18-8GTRG 8GB
总分
Crucial Technology BLS4G4D240FSE.8FBD 4GB
总分
G Skill Intl F4-3600C18-8GTRG 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
G Skill Intl F4-3600C18-8GTRG 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
29
左右 -7% 更低的延时
更快的读取速度,GB/s
17.6
16.9
测试中的平均数值
更快的写入速度,GB/s
15.5
12.0
测试中的平均数值
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3600C18-8GTRG 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
27
读取速度,GB/s
16.9
17.6
写入速度,GB/s
12.0
15.5
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2601
3683
Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
G Skill Intl F4-3600C18-8GTRG 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SpecTek Incorporated ?????????????????? 2GB
Micron Technology 9ASF51272PZ-2G1A2 4GB
Samsung M3 78T5663RZ3-CE6 2GB
Gold Key Technology Co Ltd NMUD480E85-3200E 8GB
Kingston 9905403-447.A00LF 4GB
SK Hynix HMA82GS6DJR8N-VK 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3600C18-8GTRG 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston 9905678-027.A00G 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Ramaxel Technology RMSA3260MB78HAF2400 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Samsung M471A2K43BB1-CTD 16GB
Samsung M471A1K43DB1-CWE 8GB
Crucial Technology CB16GS2666.C8ET 16GB
Samsung M378B5673EH1-CF8 2GB
Mushkin MRX4U300GJJM16G 16GB
takeMS International AG TMS2GB264D083805EV 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-3866C18-8GTZR 8GB
Samsung M3 78T2863EHS-CF7 1GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CM4B4G1J2400A14K 4GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-3600C16-32GTZR 32GB
报告一个错误
×
Bug description
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