Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Kingston ACR26D4U9S1KA-4 4GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

Kingston ACR26D4U9S1KA-4 4GB

Kingston ACR26D4U9S1KA-4 4GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 33

左右 12% 更低的延时
更快的读取速度，GB/s

16.9 14.6

测试中的平均数值
更快的写入速度，GB/s

12.0 11.9

测试中的平均数值

Kingston ACR26D4U9S1KA-4 4GB

需要考虑的原因
Kingston ACR26D4U9S1KA-4 4GB

报告一个错误

更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston ACR26D4U9S1KA-4 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 33
读取速度，GB/s

16.9 14.6
写入速度，GB/s

12.0 11.9
内存带宽，mbps

19200 21300

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2601 2664

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KF552C40-16 16GB

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Micron Technology 16ATF2G64HZ-2G3E1 16GB

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SK Hynix HMA81GS6DJR8N-XN 8GB

Samsung M471A1K43CB1-CRC 8GB

Samsung M471A1K43CB1-CRC 8GB

Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

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Crucial Technology CB16GS2666.C8ET 16GB

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Ramaxel Technology RMUA5110KE68H9F-2400 4GB

Ramaxel Technology RMUA5110KE68H9F-2400 4GB