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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston ACR32D4S2S8ME-16 16GB
比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Kingston ACR32D4S2S8ME-16 16GB
总分
Crucial Technology BLS4G4D240FSE.8FBD 4GB
总分
Kingston ACR32D4S2S8ME-16 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
低于PassMark测试中的延时,ns
29
49
左右 41% 更低的延时
更快的写入速度,GB/s
12.0
10.7
测试中的平均数值
需要考虑的原因
Kingston ACR32D4S2S8ME-16 16GB
报告一个错误
更快的读取速度,GB/s
17.1
16.9
测试中的平均数值
更高的内存带宽,mbps
25600
19200
左右 1.33 更高的带宽
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston ACR32D4S2S8ME-16 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
49
读取速度,GB/s
16.9
17.1
写入速度,GB/s
12.0
10.7
内存带宽,mbps
19200
25600
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2601
2668
Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Kingston ACR32D4S2S8ME-16 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F3-2400C11-8GSR 8GB
Apacer Technology 78.D2GF2.AU30B 16GB
Kingston 99U5584-005.A00LF 4GB
Apacer Technology 78.CAGP7.AFW0C 8GB
Swissbit MEU25664D6BC2EP-30 2GB
Samsung M471A2K43EB1-CWE 16GB
Corsair CMX8GX3M2A2000C9 4GB
Corsair CMD16GX4M2B2400C10 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Samsung M471A1K43CBCBCRC 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BL16G32C16S4B.M16FE1 16GB
Essencore Limited KD48GU88C-26N1600 8GB
G Skill Intl F4-2400C15-8GIS 8GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston 99U5711-001.A00G 4GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
SK Hynix HMT425S6AFR6A-PB 2GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-3000C16-16GSXFB 16GB
PNY Electronics PNY 2GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Samsung M471B5273CH0-CH9 4GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS16G4D240FSB.16FBD 16GB
报告一个错误
×
Bug description
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