RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kllisre M378A5143EB2-CRC 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Kllisre M378A5143EB2-CRC 4GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分
star star star star star
Kllisre M378A5143EB2-CRC 4GB

Kllisre M378A5143EB2-CRC 4GB

差异 规格 评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 47
    左右 38% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 11.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 7.9
    测试中的平均数值
Kllisre M378A5143EB2-CRC 4GB 需要考虑的原因
Kllisre M378A5143EB2-CRC 4GB
报告一个错误

规格

完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kllisre M378A5143EB2-CRC 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 47
  • 读取速度，GB/s
    16.9 left arrow 11.1
  • 写入速度，GB/s
    12.0 left arrow 7.9
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2601 left arrow 1967

Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较

SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB

Kllisre M378A5143EB2-CRC 4GB RAM的比较

Kreton Corporation 51624xxxx68x35xxxx 2GB
Smart Modular SH564128FH8NZQNSCG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
SK Hynix HMA82GU6DJR8N-VK 16GB
SK Hynix HMA82GU6DJR8N-VK 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kllisre M378A5143EB2-CRC 4GB
Kllisre M378A5143EB2-CRC 4GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
SK Hynix HMA81GS6AFR8N-VK 8GB
SK Hynix HMA81GS6AFR8N-VK 8GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX3733C19D4/8GX 8GB
Kingston KHX3733C19D4/8GX 8GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Samsung M471A2K43CB1-CTD 16GB
Samsung M471A2K43CB1-CTD 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Panram International Corporation PUD42400C168GVS 8GB
Panram International Corporation PUD42400C168GVS 8GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F4-2400C17-4GIS 4GB
G Skill Intl F4-2400C17-4GIS 4GB
内存RAM
Qimonda 64T128020EDL2.5C2 1GB
Qimonda 64T128020EDL2.5C2 1GB
Apacer Technology 76.D305G.D390B 16GB
Apacer Technology 76.D305G.D390B 16GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Micron Technology AFLD48VH1P 8GB
Micron Technology AFLD48VH1P 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Micron Technology 9ASF1G72PZ-2G3B1 8GB
Micron Technology 9ASF1G72PZ-2G3B1 8GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Micron Technology 8G2666CL19 8GB
Micron Technology 8G2666CL19 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-2666C19-8GRS 8GB
G Skill Intl F4-2666C19-8GRS 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Essencore Limited IM48GU48A30-GIIHM 8GB
Essencore Limited IM48GU48A30-GIIHM 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Transcend Information JM2666HSB-8G 8GB
Transcend Information JM2666HSB-8G 8GB
内存RAM