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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M471A5143DB0-CPB 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Samsung M471A5143DB0-CPB 4GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分
star star star star star
Samsung M471A5143DB0-CPB 4GB

Samsung M471A5143DB0-CPB 4GB

差异 规格 评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 39
    左右 26% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 14.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 10.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13% 更高的带宽
Samsung M471A5143DB0-CPB 4GB 需要考虑的原因
Samsung M471A5143DB0-CPB 4GB
报告一个错误

规格

完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M471A5143DB0-CPB 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 39
  • 读取速度，GB/s
    16.9 left arrow 14.1
  • 写入速度，GB/s
    12.0 left arrow 10.7
  • 内存带宽，mbps
    19200 left arrow 17000
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2601 left arrow 2183

Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较

SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB

Samsung M471A5143DB0-CPB 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M471A5143DB0-CPB 4GB
Samsung M471A5143DB0-CPB 4GB
内存RAM
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Hexon Technology Pte Ltd HEXON 1GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Essencore Limited KD48GU88C-26N1600 8GB
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内存RAM