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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
总分
Crucial Technology BLS4G4D240FSE.8FBD 4GB
总分
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
报告一个错误
低于PassMark测试中的延时,ns
18
29
左右 -61% 更低的延时
更快的读取速度,GB/s
20.2
16.9
测试中的平均数值
更快的写入速度,GB/s
16.2
12.0
测试中的平均数值
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
18
读取速度,GB/s
16.9
20.2
写入速度,GB/s
12.0
16.2
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2601
3536
Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB RAM的比较
Apacer Technology AQD-D4U8GN24-SE 8GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M378B5773DH0-CH9 2GB
Mushkin 99[2/7/4]205F 8GB
Kingston KVR533D2N4 512MB
Kingston KMKYF9-MIB 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
Crucial Technology CT51264BD160B.C16F 4GB
G Skill Intl F4-2400C17-4GFX 4GB
Team Group Inc. Team-Elite-1333 4GB
Kingston KHX2400C15D4/4G 4GB
A-DATA Technology ADOVE1A0834E 1GB
Super Talent F21UB8GS 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
G Skill Intl F4-3733C17-8GTZKK 8GB
A-DATA Technology DDR3 1866 2OZ 4GB
G Skill Intl F4-3600C18-16GTZN 16GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Patriot Memory (PDP Systems) PSD432G32002 32GB
Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 8G2666CL19 8GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology BL32G36C16U4BL.M16FB 32GB
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B5173DB0-YK0 4GB
Kingston KVR800D2N6/2G 2GB
Samsung M378T5663QZ3-CF7 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston KHX2400C15S4/4G 4GB
报告一个错误
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Bug description
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