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Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Corsair CMK16GX4M2E4000C19 8GB
比较
Crucial Technology BLS4G4D240FSE.M8FADM 4GB vs Corsair CMK16GX4M2E4000C19 8GB
总分
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
总分
Corsair CMK16GX4M2E4000C19 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
31
左右 23% 更低的延时
更快的读取速度,GB/s
15.5
14.3
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
Corsair CMK16GX4M2E4000C19 8GB
报告一个错误
更快的写入速度,GB/s
12.0
11.0
测试中的平均数值
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Corsair CMK16GX4M2E4000C19 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
31
读取速度,GB/s
15.5
14.3
写入速度,GB/s
11.0
12.0
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2445
2929
Crucial Technology BLS4G4D240FSE.M8FADM 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK16GX4M2E4000C19 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B1G73DB0-YK0 8GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston KHX3466C19D4/8G 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Kingston XW21KG-MIE2 8GB
Samsung M393B2G70BH0-YK0 16GB
Micron Technology 4ATF51264AZ-2G3B1 4GB
Crucial Technology CT102464BF160B.C16 8GB
G Skill Intl F4-2666C18-8GFX 8GB
Crucial Technology CT51264BF160BJ.M8F 4GB
Kingston KF3200C20S4/32GX 32MB
Kingston 99U5584-001.A00LF 4GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
Samsung M471B1G73QH0-YK0 8GB
Corsair CMU32GX4M2C3000C16 16GB
Crucial Technology CT25664AA800.M16FM 2GB
Samsung M391A2K43BB1-CTD 16GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Kingston 99U5702-101.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Samsung M393A1K43BB1-CTD 8GB
Samsung M471B5673FH0-CF8 2GB
Micron Technology 16ATF2G64AZ-3G2J1 16GB
Kingston KVR800D2N6/2G 2GB
Gloway International Co. Ltd. WAR4U2666D19081C 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
Teikon TMA851U6CJR6N-VKSC 4GB
报告一个错误
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Bug description
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