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Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Team Group Inc. DDR4 3600 8GB
比较
Crucial Technology BLS4G4D240FSE.M8FADM 4GB vs Team Group Inc. DDR4 3600 8GB
总分
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
总分
Team Group Inc. DDR4 3600 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
64
左右 63% 更低的延时
更快的写入速度,GB/s
11.0
8.8
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
Team Group Inc. DDR4 3600 8GB
报告一个错误
更快的读取速度,GB/s
17
15.5
测试中的平均数值
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Team Group Inc. DDR4 3600 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
64
读取速度,GB/s
15.5
17.0
写入速度,GB/s
11.0
8.8
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2445
2103
Crucial Technology BLS4G4D240FSE.M8FADM 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Team Group Inc. DDR4 3600 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3466C16-16GTZ 16GB
报告一个错误
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Bug description
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