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Crucial Technology BLS8G3N169ES4.16FE 8GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB

Crucial Technology BLS8G3N169ES4.16FE 8GB vs Micron Technology 8ATF1G64HZ-3G2E1 8GB

总分
star star star star star
Crucial Technology BLS8G3N169ES4.16FE 8GB

Crucial Technology BLS8G3N169ES4.16FE 8GB

总分
star star star star star
Micron Technology 8ATF1G64HZ-3G2E1 8GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB

差异 规格 评论

差异

Crucial Technology BLS8G3N169ES4.16FE 8GB 需要考虑的原因
Crucial Technology BLS8G3N169ES4.16FE 8GB
报告一个错误
Micron Technology 8ATF1G64HZ-3G2E1 8GB 需要考虑的原因
Micron Technology 8ATF1G64HZ-3G2E1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 41
    左右 -78% 更低的延时
  • 更快的读取速度，GB/s
    17 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.4 left arrow 8.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLS8G3N169ES4.16FE 8GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 23
  • 读取速度，GB/s
    13.3 left arrow 17.0
  • 写入速度，GB/s
    8.8 left arrow 13.4
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2394 left arrow 2936

Crucial Technology BLS8G3N169ES4.16FE 8GB RAM的比较

Samsung M471B5673FH0-CH9 2GB
Apacer Technology D12.2324CS.001 8GB

Micron Technology 8ATF1G64HZ-3G2E1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Crucial Technology BLS8G3N169ES4.16FE 8GB
Crucial Technology BLS8G3N169ES4.16FE 8GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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SK Hynix HYMP164U64CP6-Y5 512MB
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Corsair CMU64GX4M4C3200C16 16GB
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