Crucial Technology BLS8G3N18AES4.16FE 8GB vs G Skill Intl F4-3200C16-16GTZKY 16GB

总分

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

总分

G Skill Intl F4-3200C16-16GTZKY 16GB

G Skill Intl F4-3200C16-16GTZKY 16GB

差异规格评论

差异

Crucial Technology BLS8G3N18AES4.16FE 8GB

需要考虑的原因
Crucial Technology BLS8G3N18AES4.16FE 8GB

报告一个错误

G Skill Intl F4-3200C16-16GTZKY 16GB

需要考虑的原因
G Skill Intl F4-3200C16-16GTZKY 16GB

报告一个错误

低于PassMark测试中的延时，ns

18 42

左右 -133% 更低的延时
更快的读取速度，GB/s

20.7 13.2

测试中的平均数值
更快的写入速度，GB/s

16.4 9.4

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLS8G3N18AES4.16FE 8GB

G Skill Intl F4-3200C16-16GTZKY 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 18
读取速度，GB/s

13.2 20.7
写入速度，GB/s

9.4 16.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2326 3722

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Nanya Technology M2S4G64CB8HB5N-CG 4GB

Nanya Technology M2S4G64CB8HB5N-CG 4GB

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Crucial Technology BL8G36C16U4RL.M8FE1 8GB

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Samsung M378A1K43EB2-CWE 8GB

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Century Micro Inc. CENTURY JAPAN MEMORY 8GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

Golden Empire CL16-16-16 D4-3200 4GB

Golden Empire CL16-16-16 D4-3200 4GB