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Crucial Technology BLS8G3N18AES4.16FE 8GB
G Skill Intl F4-3200C16-16GTZKY 16GB
比较
Crucial Technology BLS8G3N18AES4.16FE 8GB vs G Skill Intl F4-3200C16-16GTZKY 16GB
总分
Crucial Technology BLS8G3N18AES4.16FE 8GB
总分
G Skill Intl F4-3200C16-16GTZKY 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS8G3N18AES4.16FE 8GB
报告一个错误
需要考虑的原因
G Skill Intl F4-3200C16-16GTZKY 16GB
报告一个错误
低于PassMark测试中的延时,ns
18
42
左右 -133% 更低的延时
更快的读取速度,GB/s
20.7
13.2
测试中的平均数值
更快的写入速度,GB/s
16.4
9.4
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Crucial Technology BLS8G3N18AES4.16FE 8GB
G Skill Intl F4-3200C16-16GTZKY 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
42
18
读取速度,GB/s
13.2
20.7
写入速度,GB/s
9.4
16.4
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2326
3722
Crucial Technology BLS8G3N18AES4.16FE 8GB RAM的比较
Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
G Skill Intl F4-3200C16-16GTZKY 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology BLS8G3N18AES4.16FE 8GB
G Skill Intl F4-3200C16-16GTZKY 16GB
A-DATA Technology DDR3 1600 4GB
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Golden Empire CL18-20-20 D4-3000 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Kingston KH2400C15D4/8 8GB
Samsung M391B5673EH1-CH9 2GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
Samsung M378B5773DH0-CH9 2GB
Kingston 9905712-001.B00G 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BL8G24C16U4B.8FD 8GB
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-3200C16-16GTZKY 16GB
Nanya Technology M2S4G64CB8HB5N-CG 4GB
Nanya Technology M2S4G64CB8HB5N-CG 4GB
Kingston 9965516-112.A00LF 16GB
Corsair CMD8GX4M2B3866C18 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
Kingston 9965525-018.A00LF 4GB
Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB
Corsair CM3B4G2C1600L9 4GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Samsung M393A2G40DB0-CPB 16GB
Samsung M378A1G43TB1-CTD 8GB
报告一个错误
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Bug description
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