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Crucial Technology BLS8G3N18AES4.16FE 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
比较
Crucial Technology BLS8G3N18AES4.16FE 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
总分
Crucial Technology BLS8G3N18AES4.16FE 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS8G3N18AES4.16FE 8GB
报告一个错误
更快的读取速度,GB/s
13.2
7.8
测试中的平均数值
更快的写入速度,GB/s
9.4
6.1
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
报告一个错误
低于PassMark测试中的延时,ns
41
42
左右 -2% 更低的延时
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Crucial Technology BLS8G3N18AES4.16FE 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
42
41
读取速度,GB/s
13.2
7.8
写入速度,GB/s
9.4
6.1
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2326
1512
Crucial Technology BLS8G3N18AES4.16FE 8GB RAM的比较
Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB RAM的比较
Samsung M3 78T5663RZ3-CE6 2GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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G Skill Intl F4-2400C15-8GVS 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Samsung V-GeN D4S4GL32A8TL 4GB
G Skill Intl F5-5600J4040C16G 16GB
Kingston CBD32D4S2S1ME-8 8GB
Kingston 9905471-002.A00LF 2GB
SK Hynix HMA81GS6AFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMD32GX4M4B3333C16 8GB
Kingston KHX1866C10D3/8GX 8GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Micron Technology CT4G4DFS8213.8FA11 4GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Kingston KHYXPX-MIE 8GB
Samsung M393B5170FH0-CK0 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Samsung M393A2K40BB1-CRC 16GB
A-DATA Technology DQKD1A08 1GB
Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB
报告一个错误
×
Bug description
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