Samsung M3 78T5663RZ3-CE6 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Samsung M3 78T5663RZ3-CE6 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

报告一个错误

低于PassMark测试中的延时，ns

41 60

左右 -46% 更低的延时
更快的读取速度，GB/s

7.8 4

测试中的平均数值
更快的写入速度，GB/s

6.1 2,168.2

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 41
读取速度，GB/s

4,595.2 7.8
写入速度，GB/s

2,168.2 6.1
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

941 1512

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

G Skill Intl F4-3200C16-16GVK 16GB

G Skill Intl F4-3200C16-16GVK 16GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Lexar Co Limited LD4AU016G-H2666G 16GB

Lexar Co Limited LD4AU016G-H2666G 16GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Apacer Technology 76.D305G.D390B 16GB

Apacer Technology 76.D305G.D390B 16GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Kingston X2YH1K-MIE-NX 16GB

Kingston X2YH1K-MIE-NX 16GB

Crucial Technology BLS8G3N169ES4.16FE 8GB

Crucial Technology BLS8G3N169ES4.16FE 8GB

Crucial Technology CT32G4SFD832A.M16FF 32GB

Crucial Technology CT32G4SFD832A.M16FF 32GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Micron Technology 8ATF1G64HZ-2G1A1 8GB

Micron Technology 8ATF1G64HZ-2G1A1 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Netac Technology Co Ltd E40832A 8GB

Netac Technology Co Ltd E40832A 8GB

Kingston KHX1600C9D3/4GX 4GB

Kingston KHX1600C9D3/4GX 4GB

Kingston X75V1H-MIE 32GB

Kingston X75V1H-MIE 32GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Kingston KHX2133C13D4/4GX 4GB

Kingston KHX2133C13D4/4GX 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology CT16G4DFD8266.M16FR 16GB

Crucial Technology CT16G4DFD8266.M16FR 16GB