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Golden Empire 1GB DDR2 800 CAS=4 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Golden Empire 1GB DDR2 800 CAS=4 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

总分
star star star star star
Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB

差异 规格 评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB 需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    41 left arrow 49
    左右 -20% 更低的延时
  • 更快的读取速度，GB/s
    7.8 left arrow 4
    测试中的平均数值
  • 更快的写入速度，GB/s
    6.1 left arrow 2,066.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Golden Empire 1GB DDR2 800 CAS=4 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 41
  • 读取速度，GB/s
    4,577.1 left arrow 7.8
  • 写入速度，GB/s
    2,066.5 left arrow 6.1
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    737 left arrow 1512

Golden Empire 1GB DDR2 800 CAS=4 1GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TFTD 4GB RAM的比较

Samsung M3 78T5663RZ3-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
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