RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Crucial Technology BLS8G3N18AES4.16FE 8GB
Kingston KKN2NM-MIE 4GB

Crucial Technology BLS8G3N18AES4.16FE 8GB vs Kingston KKN2NM-MIE 4GB

总分
star star star star star
Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

总分
star star star star star
Kingston KKN2NM-MIE 4GB

Kingston KKN2NM-MIE 4GB

差异 规格 评论

差异

Crucial Technology BLS8G3N18AES4.16FE 8GB 需要考虑的原因
Crucial Technology BLS8G3N18AES4.16FE 8GB
报告一个错误
Kingston KKN2NM-MIE 4GB 需要考虑的原因
Kingston KKN2NM-MIE 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 42
    左右 -11% 更低的延时
  • 更快的读取速度，GB/s
    14.9 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.2 left arrow 9.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLS8G3N18AES4.16FE 8GB
Kingston KKN2NM-MIE 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 38
  • 读取速度，GB/s
    13.2 left arrow 14.9
  • 写入速度，GB/s
    9.4 left arrow 11.2
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2326 left arrow 2174

Crucial Technology BLS8G3N18AES4.16FE 8GB RAM的比较

Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Kingston KKN2NM-MIE 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
G Skill Intl F4-2400C17-4GFX 4GB
G Skill Intl F4-2400C17-4GFX 4GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Kingston KKN2NM-MIE 4GB
Kingston KKN2NM-MIE 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMR32GX4M4C3600C18 8GB
Corsair CMR32GX4M4C3600C18 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Micron Technology 8ATF2G64HZ-3G2B2 16GB
Micron Technology 8ATF2G64HZ-3G2B2 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Kingston CBD26D4S9S8ME-8 8GB
Kingston CBD26D4S9S8ME-8 8GB
内存RAM
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A2K43DB1-CTD 16GB
Samsung M471A2K43DB1-CTD 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3000C16-8GTZR 8GB
G Skill Intl F4-3000C16-8GTZR 8GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology CT16G4DFD8213.16FDD1 16GB
Crucial Technology CT16G4DFD8213.16FDD1 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Kingston KHX3000C15D4/8GX 8GB
Kingston KHX3000C15D4/8GX 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3466C16-8GTZSW 8GB
G Skill Intl F4-3466C16-8GTZSW 8GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Micron Technology 9ASF1G72PZ-2G9E1 8GB
Micron Technology 9ASF1G72PZ-2G9E1 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Essencore Limited IM4AGS88N24-FFFHA0 16GB
Essencore Limited IM4AGS88N24-FFFHA0 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston 9905702-010.A00G 8GB
Kingston 9905702-010.A00G 8GB
内存RAM