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SK Hynix HYMP125U64CP8-S6 2GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

SK Hynix HYMP125U64CP8-S6 2GB vs ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

总分
star star star star star
SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

总分
star star star star star
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

差异 规格 评论

差异

SK Hynix HYMP125U64CP8-S6 2GB 需要考虑的原因
SK Hynix HYMP125U64CP8-S6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 21.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,381.6 left arrow 14.3
    测试中的平均数值
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB 需要考虑的原因
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 60
    左右 -62% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
SK Hynix HYMP125U64CP8-S6 2GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 37
  • 读取速度，GB/s
    5,082.2 left arrow 21.4
  • 写入速度，GB/s
    2,381.6 left arrow 14.3
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    925 left arrow 3448

SK Hynix HYMP125U64CP8-S6 2GB RAM的比较

A-DATA Technology DQKD1A08 1GB
Samsung M4 70T5663QZ3-CE6 2GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB RAM的比较

Corsair CMK64GX4M4K3733C17 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
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G Skill Intl F4-2400C17-8GSXW 8GB
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Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
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Kingston XJ69DF-HYA 8GB
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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
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Samsung M3 78T2863EHS-CF7 1GB
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Crucial Technology BLS8G4S240FSDK.8FD 8GB
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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Kingston X74R9W-MIE 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-2400C17-8GSXW 8GB
G Skill Intl F4-2400C17-8GSXW 8GB
内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
内存RAM
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EVGA 16G-D3-1600-MR 8GB
A-DATA Technology AO1P32NC8T1-BCIS 8GB
A-DATA Technology AO1P32NC8T1-BCIS 8GB
内存RAM
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Elpida EBJ41UF8BDU5-GN-F 4GB
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Apacer Technology 78.CAGP7.AZC0B 8GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
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A-DATA Technology ADOVE1A0834E 1GB
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Kingston 9965604-033.D00G 16GB
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Samsung M378B5273CH0-CH9 4GB
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Kingston 9905625-097.A00G 16GB
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