Crucial Technology BLS8G3N18AES4.16FE 8GB vs SK Hynix V-GeN D4H4GL30A8TX5 4GB

总分

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

总分

SK Hynix V-GeN D4H4GL30A8TX5 4GB

SK Hynix V-GeN D4H4GL30A8TX5 4GB

差异规格评论

差异

Crucial Technology BLS8G3N18AES4.16FE 8GB

需要考虑的原因
Crucial Technology BLS8G3N18AES4.16FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

42 73

左右 42% 更低的延时
更快的写入速度，GB/s

9.4 8.4

测试中的平均数值

SK Hynix V-GeN D4H4GL30A8TX5 4GB

需要考虑的原因
SK Hynix V-GeN D4H4GL30A8TX5 4GB

报告一个错误

更快的读取速度，GB/s

15.8 13.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLS8G3N18AES4.16FE 8GB

SK Hynix V-GeN D4H4GL30A8TX5 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 73
读取速度，GB/s

13.2 15.8
写入速度，GB/s

9.4 8.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2326 1822

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Crucial Technology BLS8G3N18AES4.16FE 8GB

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G Skill Intl F4-2400C16-16GFXR 16GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Samsung M471A2K43CB1-CRCR 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Corsair CMK16GX4M2D3600C18 8GB

Corsair CMK16GX4M2D3600C18 8GB