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Crucial Technology BLS8G4D26BFSC.16FE 8GB
Crucial Technology BL16G26C16U4R.16FE 16GB

Crucial Technology BLS8G4D26BFSC.16FE 8GB vs Crucial Technology BL16G26C16U4R.16FE 16GB

总分
star star star star star
Crucial Technology BLS8G4D26BFSC.16FE 8GB

Crucial Technology BLS8G4D26BFSC.16FE 8GB

总分
star star star star star
Crucial Technology BL16G26C16U4R.16FE 16GB

Crucial Technology BL16G26C16U4R.16FE 16GB

差异 规格 评论

差异

Crucial Technology BLS8G4D26BFSC.16FE 8GB 需要考虑的原因
Crucial Technology BLS8G4D26BFSC.16FE 8GB
报告一个错误
Crucial Technology BL16G26C16U4R.16FE 16GB 需要考虑的原因
Crucial Technology BL16G26C16U4R.16FE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 66
    左右 -128% 更低的延时
  • 更快的读取速度，GB/s
    17.1 left arrow 16.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.0 left arrow 8.3
    测试中的平均数值

规格

完整的技术规格清单
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Crucial Technology BL16G26C16U4R.16FE 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    66 left arrow 29
  • 读取速度，GB/s
    16.1 left arrow 17.1
  • 写入速度，GB/s
    8.3 left arrow 13.0
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1810 left arrow 3384

Crucial Technology BLS8G4D26BFSC.16FE 8GB RAM的比较

Smart Modular SMU4TDC3C0K0464SCG 4GB
Crucial Technology CT8G4SFS8213.C8FBR1 8GB

Crucial Technology BL16G26C16U4R.16FE 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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