Crucial Technology BLS8G4D26BFSC.16FE 8GB vs Eudar Technology Inc. 8GXMP3000CL16 8GB

总分

Crucial Technology BLS8G4D26BFSC.16FE 8GB

Crucial Technology BLS8G4D26BFSC.16FE 8GB

总分

Eudar Technology Inc. 8GXMP3000CL16 8GB

Eudar Technology Inc. 8GXMP3000CL16 8GB

差异规格评论

差异

Crucial Technology BLS8G4D26BFSC.16FE 8GB

需要考虑的原因
Crucial Technology BLS8G4D26BFSC.16FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

66 73

左右 10% 更低的延时
更快的读取速度，GB/s

16.1 14.7

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11% 更高的带宽

Eudar Technology Inc. 8GXMP3000CL16 8GB

需要考虑的原因
Eudar Technology Inc. 8GXMP3000CL16 8GB

报告一个错误

更快的写入速度，GB/s

8.5 8.3

测试中的平均数值

规格

完整的技术规格清单

Crucial Technology BLS8G4D26BFSC.16FE 8GB

Eudar Technology Inc. 8GXMP3000CL16 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

66 73
读取速度，GB/s

16.1 14.7
写入速度，GB/s

8.3 8.5
内存带宽，mbps

21300 19200

Other

描述

PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1810 1712

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 2GB-DDR2 800Mhz 2GB

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Corsair CM5S16GM4800A40K2 16GB

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SK Hynix HMA851S6CJR6N-VK 4GB

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Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-2400C16-8GFX 8GB

G Skill Intl F4-2400C16-8GFX 8GB

Kingston SNY1600S11-4G-EDEG 4GB

Kingston SNY1600S11-4G-EDEG 4GB

Corsair CMD32GX4M4B3733C17 8GB

Corsair CMD32GX4M4B3733C17 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Crucial Technology CT32G4DFD832A.M16FB 32GB

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Samsung M393B2G70BH0-CH9 16GB

Crucial Technology CT16G4SFD8213.C16FBD 16GB

Crucial Technology CT16G4SFD8213.C16FBD 16GB