Crucial Technology BLT2G3D1608DT1TX0 2GB vs Patriot Memory (PDP Systems) PSD416G32002 16GB

总分

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分

Patriot Memory (PDP Systems) PSD416G32002 16GB

Patriot Memory (PDP Systems) PSD416G32002 16GB

差异规格评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB

需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB

报告一个错误

低于PassMark测试中的延时，ns

23 34

左右 32% 更低的延时

Patriot Memory (PDP Systems) PSD416G32002 16GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD416G32002 16GB

报告一个错误

更快的读取速度，GB/s

18 13.6

测试中的平均数值
更快的写入速度，GB/s

14.3 9.4

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLT2G3D1608DT1TX0 2GB

Patriot Memory (PDP Systems) PSD416G32002 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 34
读取速度，GB/s

13.6 18.0
写入速度，GB/s

9.4 14.3
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2096 3448

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1K70CH0-YH9 8GB

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AMD R748G2606U2S 8GB

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Crucial Technology CT102464BF160B.C16 8GB

Corsair CMD16GX4M2B3466C16 8GB

Corsair CMD16GX4M2B3466C16 8GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

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G Skill Intl F4-4500C19-8GTZSWE 8GB

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Samsung M471B1G73QH0-YK0 8GB

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Samsung M393B5170FH0-CH9 4GB

Kingston 9905598-040.A00G 16GB

Kingston 9905598-040.A00G 16GB