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Crucial Technology BLT2G3D1608DT1TX0 2GB
Samsung M474A4G43MB1-CTD 32GB

Crucial Technology BLT2G3D1608DT1TX0 2GB vs Samsung M474A4G43MB1-CTD 32GB

总分
star star star star star
Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分
star star star star star
Samsung M474A4G43MB1-CTD 32GB

Samsung M474A4G43MB1-CTD 32GB

差异 规格 评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB 需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 33
    左右 30% 更低的延时
Samsung M474A4G43MB1-CTD 32GB 需要考虑的原因
Samsung M474A4G43MB1-CTD 32GB
报告一个错误
  • 更快的读取速度，GB/s
    19.7 left arrow 13.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.8 left arrow 9.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLT2G3D1608DT1TX0 2GB
Samsung M474A4G43MB1-CTD 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    23 left arrow 33
  • 读取速度，GB/s
    13.6 left arrow 19.7
  • 写入速度，GB/s
    9.4 left arrow 14.8
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2096 left arrow 3671

Crucial Technology BLT2G3D1608DT1TX0 2GB RAM的比较

Crucial Technology BLT2G3D1608DT1TX0. 2GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB

Samsung M474A4G43MB1-CTD 32GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Samsung M474A4G43MB1-CTD 32GB
Samsung M474A4G43MB1-CTD 32GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLT8G4D30BET4K.C8FD 8GB
Crucial Technology BLT8G4D30BET4K.C8FD 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Samsung M378A2K43CB1-CRC 16GB
Samsung M378A2K43CB1-CRC 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Samsung M393A2G40DB1-CRC 16GB
Samsung M393A2G40DB1-CRC 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Kingston 9905633-017.A00G 8GB
Kingston 9905633-017.A00G 8GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Samsung M393A1G40DB0-B`B 8GB
Samsung M393A1G40DB0-B`B 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Transcend Information JM2666HLG-16GK 8GB
Transcend Information JM2666HLG-16GK 8GB
内存RAM
G Skill Intl F4-3600C16-8GTZKK 8GB
G Skill Intl F4-3600C16-8GTZKK 8GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-4000C18-32GVK 32GB
G Skill Intl F4-4000C18-32GVK 32GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Golden Empire CL17-17-17 D4-2400 16GB
Golden Empire CL17-17-17 D4-2400 16GB
内存RAM
Samsung M378B1G73QH0-CK0 8GB
Samsung M378B1G73QH0-CK0 8GB
Corsair CMW32GX4M2E3200C16 16GB
Corsair CMW32GX4M2E3200C16 16GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Panram International Corporation M424051 4GB
Panram International Corporation M424051 4GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Dust Leopard DDR4-2400 C17 4GB 4GB
Dust Leopard DDR4-2400 C17 4GB 4GB
内存RAM