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Corsair CMY8GX3M2A2666C10 4GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
比较
Corsair CMY8GX3M2A2666C10 4GB vs Eudar Technology Inc. 8GXMP2666CL16 8GB
总分
Corsair CMY8GX3M2A2666C10 4GB
总分
Eudar Technology Inc. 8GXMP2666CL16 8GB
差异
规格
评论
差异
需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB
报告一个错误
低于PassMark测试中的延时,ns
17
64
左右 73% 更低的延时
更快的读取速度,GB/s
22.8
16.5
测试中的平均数值
更快的写入速度,GB/s
15.4
8.1
测试中的平均数值
需要考虑的原因
Eudar Technology Inc. 8GXMP2666CL16 8GB
报告一个错误
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Corsair CMY8GX3M2A2666C10 4GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
17
64
读取速度,GB/s
22.8
16.5
写入速度,GB/s
15.4
8.1
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
3391
2016
Corsair CMY8GX3M2A2666C10 4GB RAM的比较
Micron Technology 4ATF1G64AZ-3G2B1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB
Eudar Technology Inc. 8GXMP2666CL16 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Patriot Memory (PDP Systems) PSD38G16002 8GB
Kingston 9905701-008.A00G 16GB
Kingston 9905471-002.A00LF 2GB
Kingston 9905700-046.A00G 16GB
Kingston KHX1600C9D3/8G 8GB
Samsung M471A1K43BB1-CRC 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3333C16-8GVK 8GB
Samsung M395T2863QZ4-CF76 1GB
Kingston KV0M5R-HYD 8GB
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMK64GX4M8X4000C19 8GB
Kingston 9905403-156.A00LF 2GB
Dust Leopard DDR4-2400 CL17 8GB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Transcend Information AQD-SD4U4GN21-SG 4GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3600C19-16GTRG 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C16-8GTZKW 8GB
Kingston 99U5403-036.A00G 4GB
Samsung V-GeN D4S16GL26A8TL6 16GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3866C18-8GTZR 8GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston KHX2666C16S4/16G 16GB
报告一个错误
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Bug description
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