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Crucial Technology BLT4G3D1337DT1TX0. 4GB
Samsung M393A5143DB0-CRC 4GB

Crucial Technology BLT4G3D1337DT1TX0. 4GB vs Samsung M393A5143DB0-CRC 4GB

总分
star star star star star
Crucial Technology BLT4G3D1337DT1TX0. 4GB

Crucial Technology BLT4G3D1337DT1TX0. 4GB

总分
star star star star star
Samsung M393A5143DB0-CRC 4GB

Samsung M393A5143DB0-CRC 4GB

差异 规格 评论

差异

Crucial Technology BLT4G3D1337DT1TX0. 4GB 需要考虑的原因
Crucial Technology BLT4G3D1337DT1TX0. 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 47
    左右 47% 更低的延时
  • 更快的读取速度，GB/s
    14.2 left arrow 10
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.4 left arrow 7.5
    测试中的平均数值
Samsung M393A5143DB0-CRC 4GB 需要考虑的原因
Samsung M393A5143DB0-CRC 4GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLT4G3D1337DT1TX0. 4GB
Samsung M393A5143DB0-CRC 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 47
  • 读取速度，GB/s
    14.2 left arrow 10.0
  • 写入速度，GB/s
    8.4 left arrow 7.5
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2309 left arrow 2308

Crucial Technology BLT4G3D1337DT1TX0. 4GB RAM的比较

Kingston HX316C10F/8 8GB
Kingston 9905711-002.A00G 4GB

Samsung M393A5143DB0-CRC 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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