Crucial Technology CB8GS2400.C8D 8GB vs Crucial Technology CT32G4DFD8266.C16FE 32GB

总分

Crucial Technology CB8GS2400.C8D 8GB

Crucial Technology CB8GS2400.C8D 8GB

总分

Crucial Technology CT32G4DFD8266.C16FE 32GB

Crucial Technology CT32G4DFD8266.C16FE 32GB

差异规格评论

差异

Crucial Technology CB8GS2400.C8D 8GB

需要考虑的原因
Crucial Technology CB8GS2400.C8D 8GB

报告一个错误

Crucial Technology CT32G4DFD8266.C16FE 32GB

需要考虑的原因
Crucial Technology CT32G4DFD8266.C16FE 32GB

报告一个错误

低于PassMark测试中的延时，ns

34 89

左右 -162% 更低的延时
更快的读取速度，GB/s

17.9 13.6

测试中的平均数值
更快的写入速度，GB/s

15.2 6.8

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Crucial Technology CB8GS2400.C8D 8GB

Crucial Technology CT32G4DFD8266.C16FE 32GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

89 34
读取速度，GB/s

13.6 17.9
写入速度，GB/s

6.8 15.2
内存带宽，mbps

19200 21300

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1518 3634

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Smart Modular SMS4WEC3C0K0446SCG 4GB

Smart Modular SMS4WEC3C0K0446SCG 4GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

SK Hynix MMA82GS6CJR8N-VK 16GB

SK Hynix MMA82GS6CJR8N-VK 16GB

Crucial Technology CB8GS2400.C8D 8GB

Crucial Technology CB8GS2400.C8D 8GB

Crucial Technology CT32G4DFD8266.C16FE 32GB

Crucial Technology CT32G4DFD8266.C16FE 32GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Kingmax Semiconductor GSAG42F-18---------- 8GB

Kingmax Semiconductor GSAG42F-18---------- 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLS16G4D32AESE.M16FE 16GB

Crucial Technology BLS16G4D32AESE.M16FE 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Crucial Technology BLS16G4D30BESB.16FD 16GB

Crucial Technology BLS16G4D30BESB.16FD 16GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Micron Technology 18ADF2G72AZ-2G6E1 16GB

Micron Technology 18ADF2G72AZ-2G6E1 16GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

G Skill Intl F4-3600C18-16GTRS 16GB

G Skill Intl F4-3600C18-16GTRS 16GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

Kingston KHX2400C15D4/4G 4GB

Kingston KHX2400C15D4/4G 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB

Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Crucial Technology CT16G4DFD824A.M16FD 16GB

Crucial Technology CT16G4DFD824A.M16FD 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

A-DATA Technology DDR4 3300 2OZ 4GB

A-DATA Technology DDR4 3300 2OZ 4GB

Nanya Technology NT1GT64U88D0BY-AD 1GB

Nanya Technology NT1GT64U88D0BY-AD 1GB

Patriot Memory (PDP Systems) PSD48G266682 8GB

Patriot Memory (PDP Systems) PSD48G266682 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Crucial Technology BL16G26C16U4W.16FE 16GB

Crucial Technology BL16G26C16U4W.16FE 16GB