Crucial Technology CT102464BA160B.M16 8GB vs AMD R744G2400U1S-UO 4GB

总分

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

总分

AMD R744G2400U1S-UO 4GB

AMD R744G2400U1S-UO 4GB

差异规格评论

差异

Crucial Technology CT102464BA160B.M16 8GB

需要考虑的原因
Crucial Technology CT102464BA160B.M16 8GB

报告一个错误

低于PassMark测试中的延时，ns

40 66

左右 39% 更低的延时

AMD R744G2400U1S-UO 4GB

需要考虑的原因
AMD R744G2400U1S-UO 4GB

报告一个错误

更快的读取速度，GB/s

16.7 12.6

测试中的平均数值
更快的写入速度，GB/s

8.5 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT102464BA160B.M16 8GB

AMD R744G2400U1S-UO 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 66
读取速度，GB/s

12.6 16.7
写入速度，GB/s

7.8 8.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2209 1912

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMU64GX4M4D3000C16 16GB

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A-DATA Technology DDR4 2400 16GB

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Team Group Inc. TEAMGROUP-UD4-4133 8GB

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Samsung M3 78T5663RZ3-CE6 2GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Samsung M471A2K43DB1-CWE 16GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

InnoDisk Corporation 16GB

InnoDisk Corporation 16GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

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Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Samsung M378A2K43EB1-CWE 16GB

Samsung M378A2K43EB1-CWE 16GB