Crucial Technology CT102464BD160B.M16 8GB vs Crucial Technology BLS8G4D30CESTK.8FD 8GB

总分

Crucial Technology CT102464BD160B.M16 8GB

Crucial Technology CT102464BD160B.M16 8GB

总分

Crucial Technology BLS8G4D30CESTK.8FD 8GB

Crucial Technology BLS8G4D30CESTK.8FD 8GB

差异规格评论

差异

Crucial Technology CT102464BD160B.M16 8GB

需要考虑的原因
Crucial Technology CT102464BD160B.M16 8GB

报告一个错误

Crucial Technology BLS8G4D30CESTK.8FD 8GB

需要考虑的原因
Crucial Technology BLS8G4D30CESTK.8FD 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 41

左右 -24% 更低的延时
更快的读取速度，GB/s

16 14.2

测试中的平均数值
更快的写入速度，GB/s

13.3 8.9

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT102464BD160B.M16 8GB

Crucial Technology BLS8G4D30CESTK.8FD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 33
读取速度，GB/s

14.2 16.0
写入速度，GB/s

8.9 13.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2412 3238

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PUSKILL DDR3 1600 8G 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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G Skill Intl F4-3000C16-8GTRS 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Wilk Elektronik S.A. GR3200D464L22S/16G 16GB

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Samsung M471B5273CH0-CH9 4GB

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SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Wilk Elektronik S.A. GR2666S464L19S/8G 8GB

Wilk Elektronik S.A. GR2666S464L19S/8G 8GB