Samsung M471B5173DB0-YK0 4GB vs Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

总分

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

总分

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

差异规格评论

差异

Samsung M471B5173DB0-YK0 4GB

需要考虑的原因
Samsung M471B5173DB0-YK0 4GB

报告一个错误

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

需要考虑的原因
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 45

左右 -61% 更低的延时
更快的读取速度，GB/s

19.1 12

测试中的平均数值
更快的写入速度，GB/s

16.2 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173DB0-YK0 4GB

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 28
读取速度，GB/s

12.0 19.1
写入速度，GB/s

7.8 16.2
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1939 3562

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Samsung M3 78T2863EHS-CF7 1GB

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Crucial Technology CT16G4DFS8266.C8FB 16GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Hexon Technology Pte Ltd HEXON 1GB

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