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Crucial Technology CT102464BD160B.M16 8GB
G Skill Intl F4-3466C16-8GTZKW 8GB

Crucial Technology CT102464BD160B.M16 8GB vs G Skill Intl F4-3466C16-8GTZKW 8GB

总分
star star star star star
Crucial Technology CT102464BD160B.M16 8GB

Crucial Technology CT102464BD160B.M16 8GB

总分
star star star star star
G Skill Intl F4-3466C16-8GTZKW 8GB

G Skill Intl F4-3466C16-8GTZKW 8GB

差异 规格 评论

差异

Crucial Technology CT102464BD160B.M16 8GB 需要考虑的原因
Crucial Technology CT102464BD160B.M16 8GB
报告一个错误
G Skill Intl F4-3466C16-8GTZKW 8GB 需要考虑的原因
G Skill Intl F4-3466C16-8GTZKW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 41
    左右 -46% 更低的延时
  • 更快的读取速度，GB/s
    17.5 left arrow 14.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.6 left arrow 8.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT102464BD160B.M16 8GB
G Skill Intl F4-3466C16-8GTZKW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 28
  • 读取速度，GB/s
    14.2 left arrow 17.5
  • 写入速度，GB/s
    8.9 left arrow 12.6
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2412 left arrow 3104

Crucial Technology CT102464BD160B.M16 8GB RAM的比较

Crucial Technology BLS8G3D1609DS1S00. 8GB
UMAX Technology D4-2400-4GB-512X8-L 4GB

G Skill Intl F4-3466C16-8GTZKW 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Kingston 9965669-018.A00G 16GB
Kingston 9965669-018.A00G 16GB
内存RAM
Crucial Technology CT102464BD160B.M16 8GB
Crucial Technology CT102464BD160B.M16 8GB
G Skill Intl F4-3466C16-8GTZKW 8GB
G Skill Intl F4-3466C16-8GTZKW 8GB
内存RAM
SK Hynix HMT351R7EFR8C-RD 4GB
SK Hynix HMT351R7EFR8C-RD 4GB
Kingston 9905712-010.A00G 16GB
Kingston 9905712-010.A00G 16GB
内存RAM
SK Hynix HMA81GS6AFR8N-UH 8GB
SK Hynix HMA81GS6AFR8N-UH 8GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3600C17-8GTZR 8GB
G Skill Intl F4-3600C17-8GTZR 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Avant Technology J642GU42J9266NF 16GB
Avant Technology J642GU42J9266NF 16GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Crucial Technology BL16G26C16U4W.16FE 16GB
Crucial Technology BL16G26C16U4W.16FE 16GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Kingston ACR26D4S9S8HJ-8 8GB
Kingston ACR26D4S9S8HJ-8 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology CT32G4DFD832A.C16FE 32GB
Crucial Technology CT32G4DFD832A.C16FE 32GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-2133C15-4GRB 4GB
G Skill Intl F4-2133C15-4GRB 4GB
内存RAM
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Teikon TMA851S6AFR6N-UHHC 4GB
Teikon TMA851S6AFR6N-UHHC 4GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology BLT4G4D30AETA.K8FE 4GB
Crucial Technology BLT4G4D30AETA.K8FE 4GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Crucial Technology CT8G4DFS632A.M4FE 8GB
Crucial Technology CT8G4DFS632A.M4FE 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Avant Technology W642GU42J5213N2 16GB
Avant Technology W642GU42J5213N2 16GB
内存RAM