Samsung M395T2863QZ4-CF76 1GB vs Avant Technology W642GU42J5213N2 16GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Avant Technology W642GU42J5213N2 16GB

Avant Technology W642GU42J5213N2 16GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 16.2

测试中的平均数值
更快的写入速度，GB/s

2,404.5 11.9

测试中的平均数值

Avant Technology W642GU42J5213N2 16GB

需要考虑的原因
Avant Technology W642GU42J5213N2 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 104

左右 -316% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Avant Technology W642GU42J5213N2 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 25
读取速度，GB/s

3,192.0 16.2
写入速度，GB/s

2,404.5 11.9
内存带宽，mbps

6400 17000

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

786 2909

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Gold Key Technology Co Ltd GKE160SO102408-2933 16GB

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Kingston 9905403-038.A00LF 4GB

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Crucial Technology CT4G4DFS8266.M8FF 4GB

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SK Hynix HMA42GR7MFR4N-TFTD 16GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Super Talent F24EA8GS 8GB

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Kingston KHX1600C9D3/8G 8GB

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Kingston 9905622-024.A00G 4GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Corsair CMW32GX4M2A2666C16 16GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Kingston 9965745-002.A00G 16GB

Kingston 9965745-002.A00G 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Team Group Inc. TEAMGROUP-D4-3733 8GB

Team Group Inc. TEAMGROUP-D4-3733 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Corsair CMK64GX4M4A2400C16 16GB

Corsair CMK64GX4M4A2400C16 16GB