Samsung M395T2863QZ4-CF76 1GB vs Avant Technology W642GU42J5213N2 16GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Avant Technology W642GU42J5213N2 16GB

Avant Technology W642GU42J5213N2 16GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 16.2

测试中的平均数值
更快的写入速度，GB/s

2,404.5 11.9

测试中的平均数值

Avant Technology W642GU42J5213N2 16GB

需要考虑的原因
Avant Technology W642GU42J5213N2 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 104

左右 -316% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Avant Technology W642GU42J5213N2 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 25
读取速度，GB/s

3,192.0 16.2
写入速度，GB/s

2,404.5 11.9
内存带宽，mbps

6400 17000

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

786 2909

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMWX8GF2933Z19W8 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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SK Hynix HMT425S6AFR6A-PB 2GB

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Micron Technology 18ASF1G72PDZ-2G3B1 8GB

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Samsung M393B5270CH0-CH9 4GB

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Smart Modular SF4641G8CK8IEHLSBG 8GB

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OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

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Kingston KVR800D2N6/2G 2GB

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