Crucial Technology CT102464BD160B.M16 8GB vs Kingston 9905712-001.B00G 16GB

总分

Crucial Technology CT102464BD160B.M16 8GB

Crucial Technology CT102464BD160B.M16 8GB

总分

Kingston 9905712-001.B00G 16GB

Kingston 9905712-001.B00G 16GB

差异规格评论

差异

Crucial Technology CT102464BD160B.M16 8GB

需要考虑的原因
Crucial Technology CT102464BD160B.M16 8GB

报告一个错误

低于PassMark测试中的延时，ns

41 47

左右 13% 更低的延时
更快的写入速度，GB/s

8.9 8.3

测试中的平均数值

Kingston 9905712-001.B00G 16GB

需要考虑的原因
Kingston 9905712-001.B00G 16GB

报告一个错误

更快的读取速度，GB/s

14.7 14.2

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT102464BD160B.M16 8GB

Kingston 9905712-001.B00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 47
读取速度，GB/s

14.2 14.7
写入速度，GB/s

8.9 8.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2412 2201

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Wilk Elektronik S.A. GX2400S464L17S/8G-S1 8GB

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G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

Kingston KHX2400C15D4/8G 8GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Crucial Technology CT16G4DFRA32A.C8FE 16GB

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Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Micron Technology 36ASF2G72PZ-2G3B1 16GB

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A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Micron Technology 8ATF1G64AZ-2G6D1 8GB

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Kingston 9905403-444.A00LF 4GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

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AMD R538G1601U2S 8GB

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Corsair CM4X16GC3200C16K2E 16GB

Corsair CM4X16GC3200C16K2E 16GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

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Kingston 99U5702-025.A00G 8GB

Kingston 99U5702-025.A00G 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A

Golden Empire CL18-20-20 D4-3000 8GB

Golden Empire CL18-20-20 D4-3000 8GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Micron Technology 16ATF2G64AZ-2G1A1 16GB

Micron Technology 16ATF2G64AZ-2G1A1 16GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

G Skill Intl F4-3600C14-8GTZN 8GB

G Skill Intl F4-3600C14-8GTZN 8GB

Samsung M471B5673FH0-CH9 2GB

Samsung M471B5673FH0-CH9 2GB

G Skill Intl F4-3200C16-16GTZKO 16GB

G Skill Intl F4-3200C16-16GTZKO 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

INTENSO 5641152 4GB

INTENSO 5641152 4GB

Kingston 9905471-006.A00LF 4GB

Kingston 9905471-006.A00LF 4GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB